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| TCUT1300X01 Vishay Semiconductors Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released Description The TCUT1300X01 is a compact transmissive sensor that includes an infrared emitter and two phototransistor detectors, located face-to-face in a surface mount package. Pin connection Top view E E Coll. 19534 Cath. NC A Features * Product designed and qualified acc. AEC-Q101 for the automotive market * Package type: Surface mount * Detector type: Phototransistor * Dimensions: L 5.5 mm x W 4 mm x H 4 mm * Gap: 3 mm * * * * * * e4 Aperture: 0.3 mm Channel distance (center to center): 0.8 mm Typical output current under test: IC = 0.6 mA Emitter wavelength: 950 nm Lead (Pb)-free soldering released Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC * Minimum order quantity: 2000 pcs, 2000 pcs/reel Applications * Automotive optical sensors * Accurate position sensor for encoder * Sensor for motion, speed and direction Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Coupler Parameter Power dissipation Ambient temperature range Storage temperature range Soldering temperature in accordance with fig. 15 Test condition Tamb 25 C Symbol P Tamb Tstg Tsd Value 150 - 40 to + 85 - 40 to + 100 260 Unit mW C C C Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation tp 10 s Tamb 25 C Test condition Symbol VR IF IFSM PV Value 5 25 200 75 Unit V mA mA mW Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Document Number 84756 Rev. 2.2, 10-May-07 Tamb 25 C Test condition Symbol VCEO VECO IC PV Value 20 7 20 75 Unit V V mA mW www.vishay.com 1 TCUT1300X01 Vishay Semiconductors 200 P - Power Dissipation (mW) Sensor 150 100 50 Emitter/Detector 0 0 16538 100 75 25 50 Tamb - Ambient Temperature (C) Figure 1. Power Dissipation Limit vs. Ambient Temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Coupler Parameter Collector current per channel Collector emitter saturation voltage Test condition VCE = 5 V, IF = 15 mA IF = 15 mA, IC = 0.05 mA Symbol IC VCEsat Min 300 Typ. 600 0.4 Max Unit A V Input (Emitter) Parameter Forward voltage Reverse current Junction capacitance VR = 5 V VR = 0 V, f = 1 MHz Test condition IF = 15 mA Symbol VF IR Cj 25 Min Typ. 1.2 Max 1.4 10 Unit V A pF Output (Detector) Parameter Collector emitter voltage IC Emitter collector voltage Collector dark current Test condition IC = 1 mA IE = 100 A VCE = 25 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min 20 7 1 100 Typ. Max Unit V V nA Switching Characteristics Parameter Rise time Fall time Test condition IC = 0.3 mA, VCE = 5 V, RL = 100 (see figure 2) IC = 0.3 mA, VCE = 5 V, RL = 100 (see figure 2) Symbol tr tf Min Typ. 20.0 30.0 Max 150 150 Unit s s www.vishay.com 2 Document Number 84756 Rev. 2.2, 10-May-07 TCUT1300X01 Vishay Semiconductors IF 0 IF IF +5V IC adjusted by I F 0 IC 100 % 90 % tp t RG = 50 tp = 20 T tp = 1 ms Channel I Channel II 50 20688 Oscilloscope RL CL 1M 20 pF 10 % 0 tr td t on pulse duration delay time rise time turn-on time ts tf t off t storage time fall time turn-off time 100 tp td tr t on (= t d + tr) 96 11698 ts tf t off (= t s +t f ) Figure 2. Test Circuit for tr and tf Figure 3. Switching Times Typical Characteristics Tamb = 25 C, unless otherwise specified 1000 10 IC - Collector Current (mA) IF - Forward Current (mA) 100 1 VCE = 5 V 10 0.1 1 0.01 0.1 0 20589 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0.001 0.1 20591 1 10 100 VF - Forward Voltage (V) IF - Forward Current (mA) Figure 4. Forward Current vs. Forward Voltage Figure 6. Collector Current vs. Forward Current 1.4 IF = 15 mA 1.3 10 IC - Collector Current (mA) VF - Forward Voltage (V) IF = 25 mA 1 IF = 15 mA IF = 5 mA 0.1 IF = 3 mA 1.2 1.1 1.0 - 40 20592 0.01 - 20 0 20 40 60 80 100 20689 0.1 1 10 100 Tamb - Ambient Temperature (C) VCE - Collector Emitter Voltage (V) Figure 5. Forward Voltage vs. Ambient Temperature Figure 7. Collector Current vs. Collector Emitter Voltage Document Number 84756 Rev. 2.2, 10-May-07 www.vishay.com 3 TCUT1300X01 Vishay Semiconductors VCEsat - Coll. Emitter Saturation Voltage (V) 0.20 1 IC rel - Relative Collector Current 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 IC = 50 A s 0.8 IF = 5 mA 0.6 IF = 15 mA 0.4 0.2 0.00 - 40 20590 - 20 0 20 40 60 80 100 20595 0 - 1.5 -1 - 0.5 0 0.5 1 1.5 Tamb - Ambient Tempearture (C) s - Horizontal Displacement Figure 8. Collector Emitter Saturation Voltage vs. Ambient Temperature Figure 11. Relative Collector Current vs. Horizontal Displacement 0.7 VCE = 5 V 1 IC - Collector Current (mA) IF = 15 mA 0.5 0.4 0.3 0.2 0.1 0.0 - 40 IF = 5 mA ICrel - Rel. Collector Current 0.6 1 0.2 0.5 Optical Axis 0 - 20 0 20 40 60 80 100 20610 - 1.5 -1 - 0.5 0 0.5 1 S 1.5 20593 Tamb - Ambient Temperature (C) S - Vertical Displacement (mm) Figure 9. Collector Current vs. Ambient Temperature Figure 12. Relative Collector Current vs. Vertical Displacement 10000 100 IF = 0 90 ICE0 - Collector Dark Current (nA) 1000 VCE = 70 V VCE = 25 V 100 VCE = 5 V tr/tf - Rise/Fall Time (s) 80 70 60 50 40 30 20 10 tr tf RL = 100 10 1 0 20594 0 10 20 30 40 50 60 70 80 90 100 20599 0 250 500 750 1000 1250 1500 1750 2000 IC - Collector Current (A) Tamb - Ambient Temperature (C) Figure 10. Collector Dark Current vs. Ambient Temperature Figure 13. Rise/Fall Time vs. Collector Current www.vishay.com 4 Document Number 84756 Rev. 2.2, 10-May-07 TCUT1300X01 Vishay Semiconductors Floor Life IF = 15 mA + VC = 5 V Level 1, acc. JEDEC, J-STD-020. No time limit. Reflow Solder Profile 300 74HCT14 Temperature (C) 250 200 255 C 255C 240 C 217 C max. 30 s max. 260 C 245 C 10 k VE UQ 150 max. 120 s max. 100 s 100 50 max. Ramp Up 3 C/s max. Ramp Down 6 C/s GND Figure 14. Application example 13887 0 0 19841 50 100 150 Time (s) 200 250 300 Figure 15. Lead (Pb)-free Reflow Solder Profile acc. J-STD-020C Package Dimensions in millimeters 19536 Document Number 84756 Rev. 2.2, 10-May-07 www.vishay.com 5 TCUT1300X01 Vishay Semiconductors Package Dimensions in millimeters www.vishay.com 6 Document Number 84756 Rev. 2.2, 10-May-07 TCUT1300X01 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 84756 Rev. 2.2, 10-May-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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